Characteristics Measurement in a Deep UV Single Photon Detector Based on a TE-cooled 4H-SiC APD

We report on the characteristics of a lab-assembled UV single photon detector based thermoelectrically cooled silicon carbide (4H-SiC) avalanche photodiode (APD). The SiC- APD in this experiment was fabricated with beveled mesa structure, electronics designed to achieve passive Geiger-mode operation and convert signal transistor–transistor logic by readout backend. attached SiC-APD 4-stage thermoelectric cooler vary temperature from 25 °C −30 °C, investigated dark count rates according applied bias voltage at different temperatures. Breakdown voltages were also measured while adjusting temperature. Finally, we evaluated afterpulse through time-correlated single-photon counting method, observed that afterpulsing probability increases decreasing